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Structure of post-annealed ferroelectric PbZr Ti O and SrBi Ta O thin x 1 – x 3 2 2 9 films
| Content Provider | Semantic Scholar |
|---|---|
| Author | Gao, Jianxia Liu, Erjia Zhang, Zhibin Cao, Jianqing Zenga, Aiping |
| Copyright Year | 2003 |
| Abstract | In order to fabricate good quality ferroelectric thin films, PbZr Ti O (PZT) and SrBi Ta O (SBT) films were fabricated x 1–x 3 2 2 9 ( ) on SiO ySi(100) substrates and on Pt yTiy SiO ySi(100) substrates by pulsed laser excimer deposition (PLD). X-ray diffraction, 2 2 Rutherford backscattering analysis, and atomic force microscopy were used to characterize the structural properties of the samples, which were post-annealed at different temperatures. The results showed that the PZT and SBT films fabricated on Pt yTiySiO y 2 Si(100) substrates and annealed at 700 8C exhibited optimum properties. 2002 Elsevier Science B.V. All rights reserved. PACS: 81.15.fg; 82.80.ej; 82.80.yc; 87.64.dz |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://www3.ntu.edu.sg/home/mejliu/index_files/Gao%20JX_TSF2003.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |