X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates

Content Provider	Semantic Scholar
Author	Zaumseil, P. Kozlowski, Grzegorz Yamamoto, Yuji Schubert, Markus Andreas Schröder, Thomas
Copyright Year	2013
Abstract	On the way to integrate lattice mismatched semiconductors on Si(001), the Ge/Si heterosystem was used as a case study for the concept of compliant substrate effects that offer the vision to be able to integrate defect-free alternative semiconductor structures on Si. Ge nanoclusters were selectively grown by chemical vapour deposition on Si nano-islands on silicon-on-insulator (SOI) substrates. The strain states of Ge clusters and Si islands were measured by grazing-incidence diffraction using a laboratory-based X-ray diffraction technique. A tensile strain of up to 0.5% was detected in the Si islands after direct Ge deposition. Using a thin (∼10 nm) SiGe buffer layer between Si and Ge the tensile strain increases to 1.8%. Transmission electron microscopy studies confirm the absence of a regular grid of misfit dislocations in such structures. This clear experimental evidence for the compliance of Si nano-islands on SOI substrates opens a new integration concept that is not only limited to Ge but also extendable to semiconductors like III-V and II-VI materials.
Starting Page	868
Ending Page	873
Page Count	6
File Format	PDF HTM / HTML
Alternate Webpage(s)	http://journals.iucr.org/j/issues/2013/04/00/xz5001/xz5001.pdf
PubMed reference number	24046490
Volume Number	46
Journal	Journal of applied crystallography
Language	English
Access Restriction	Open
Subject Keyword	Buffers Compliance behavior Diagnostic radiologic examination Diameter (qualifier value) Dislocations Greater Than or Equal To International System of Units Iodine I 124-cRGDY-PEG-C Dots Nano Nanostructured Materials Semiconductors Silicon Transmission Electron Microscopy anatomical layer
Content Type	Text
Resource Type	Article