NDLI: Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy

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Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy

Content Provider	Semantic Scholar
Author	Blumenthal, Sarah R. Rieger, Torsten Meertens, Doris Pawlis, A. Reuter, D. N. As, Donat Josef
Copyright Year	2018
Abstract	We have investigated the stacking of self-assembled cubic GaN quantum dots (QDs) grown in Stranski–Krastanov (SK) growth mode. The number of stacked layers is varied to compare their optical properties. The growth is in situ controlled by reflection high energy electron diffraction to prove the SK QD growth. Atomic force and transmission electron microscopy show the existence of wetting layer and QDs with a diameter of about 10 nm and a height of about 2 nm. The QDs have a truncated pyramidal form and are vertically aligned in growth direction. Photoluminescence measurements show an increase of the intensity with increasing number of stacked QD layers. Furthermore, a systematic blue-shift of 120meV is observed with increasing number of stacked QD layers. This blueshift derives from a decrease in the QD height, because the QD height has also been the main confining dimension in our QDs.
Starting Page	1600729
Ending Page	1600729
Page Count	1
File Format	PDF HTM / HTML
DOI	10.1002/pssb.201600729
Volume Number	255
Alternate Webpage(s)	https://physik.uni-paderborn.de/fileadmin/physik/Arbeitsgruppen/AG_As/Papers/Blumenthal_et_al-2018-physica_status_solidi__b_.pdf
Alternate Webpage(s)	https://doi.org/10.1002/pssb.201600729
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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