Loading...
Please wait, while we are loading the content...
Similar Documents
Gate-Drive Considerations for Silicon Carbide FET-Based Half-Bridge Circuits
| Content Provider | Semantic Scholar |
|---|---|
| Author | Lemmon, Andrew N. Mazzola, Michael S. Gafford, James Parker, Chris |
| Copyright Year | 2013 |
| Abstract | Silicon Carbide field-effect devices are known to enable high-performance power electronics applications due to their low intrinsic capacitance and low specific on-resistance. However, non-negligible oscillatory phenomena, including instability, can accompany this increased performance, particularly in applications based on the half-bridge topology. This paper presents an analysis which enables designers to ensure the stability of applications based on this topology through careful management of gate-drive loop impedance. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://www.cavs.msstate.edu/publications/docs/2013/05/12264Lemmon_PCIM_2013.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
