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EXCITON LOCALIZATION IN InGaN/GaN QUANTUM WELLS
| Content Provider | Semantic Scholar |
|---|---|
| Author | Zhang, Xingru Kobayashi, Junko T. Kobayashi, Nobuhiko P. Dapkus, P. Daniel |
| Copyright Year | 1998 |
| Abstract | Time-resolved cathodoluminescence (CL) techniques have been employed to examine the optical properties and kinetics of carrier relaxation in a InGaN/GaN single quantum well (QW) sample. CL images of the QW sample revealed a spotty cellular pattern indicative of local In compositional variations, which induce local potential fluctuations and result in a strong lateral excitonic localization at InN-rich regions in the InGaN QW layer. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://www.bgu.ac.il/~danrich/ICPS-24-InGaN-1998.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |