Dependence of Resonant Interband Tunneling Current on Barrier and Well Width in InAs/AlSb/GaSb/AlSb/InAs Double-Barrier Structures

Content Provider	Semantic Scholar
Author	Kitabayashi, Hiroto Waho, Takao Yamamoto, Masafumi
Copyright Year	1997
Abstract	Dependence of the peak current densities (Ip) on AlSb barrier and GaSb well widths (L b and L w ) in InAs /Alsb/ GaSb/AlSb/InAs double-barrier resonant interband tunneling diodes was systematically investigated. We found that Ip increases exponentially and reaches 7.5 x 10 4 A/cm 2 , which is the highest value ever reported, as L b decreases from 7 to 3 ML. We also found that I p increases monotonically as L w decreases from 46 to 10 ML. When L w is less than 10 ML, however, I p decreases with the decrease in L w and thus has a maximum value for L w of 10 ML. This behavior can be explained well in terms of one dominant resonance level. Agreement between the behaviors of the dominant resonance level and the calculated energy level for the ground state of light holes in the well indicates that I p is mainly dominated by interband tunneling through the ground state of light holes.
Starting Page	1807
Ending Page	1810
Page Count	4
File Format	PDF HTM / HTML
DOI	10.1143/JJAP.36.1807
Volume Number	36
Alternate Webpage(s)	https://confit.atlas.jp/guide/event-img/ssdm1996/C-3-1/public/pdf_archive?type=in
Alternate Webpage(s)	https://doi.org/10.1143/JJAP.36.1807
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article