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Effect of alpha-particle irradiation dose on SiNx/AlGaN/GaN metal–insulator semiconductor high electron mobility transistors
| Content Provider | Semantic Scholar |
|---|---|
| Author | Fares, Chaker Pearton, Stephen J. Yang, Gwangseok Kim, Ji Hyun Lo, Chien-Fong Johnson, Jerry W. |
| Copyright Year | 2018 |
| Abstract | The effects of 18 MeV alpha particle irradiation dose on the electrical properties of SiNx/AlGaN/GaN metal insulator semiconductor high electron mobility transistors (MISHEMTs) using in situ grown silicon nitride as the gate dielectric were investigated. The MISHEMT devices were irradiated with alpha particles at doses of 1 × 1012 or 1 × 1013 cm−2 at a fixed energy of 18 MeV. Device performance degradation was more prominent for the irradiated samples under high frequency operation. At a frequency of 100 kHz and gate voltage pulsed from −6 to 3 V, the saturation drain current reduction was 32% and 41% after alpha irradiation doses of 1 × 1012 and 1 × 1013 cm−2, respectively. The drain current reduction at 100 kHz also depended on the duty cycle. At higher duty cycles, the drain current reduction was less severe. The calculated carrier removal rates were in the range of 2062–2175 cm−1 for the alpha doses studied. The results demonstrate the capability of AlGaN/GaN MISHEMTs in environments where resilience to radiation is required.The effects of 18 MeV alpha particle irradiation dose on the electrical properties of SiNx/AlGaN/GaN metal insulator semiconductor high electron mobility transistors (MISHEMTs) using in situ grown silicon nitride as the gate dielectric were investigated. The MISHEMT devices were irradiated with alpha particles at doses of 1 × 1012 or 1 × 1013 cm−2 at a fixed energy of 18 MeV. Device performance degradation was more prominent for the irradiated samples under high frequency operation. At a frequency of 100 kHz and gate voltage pulsed from −6 to 3 V, the saturation drain current reduction was 32% and 41% after alpha irradiation doses of 1 × 1012 and 1 × 1013 cm−2, respectively. The drain current reduction at 100 kHz also depended on the duty cycle. At higher duty cycles, the drain current reduction was less severe. The calculated carrier removal rates were in the range of 2062–2175 cm−1 for the alpha doses studied. The results demonstrate the capability of AlGaN/GaN MISHEMTs in environments where resilience ... |
| Starting Page | 041203 |
| Ending Page | 041203 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.1116/1.5042261 |
| Alternate Webpage(s) | http://ww2.che.ufl.edu/ren/paper/2018%20palpha.pdf |
| Alternate Webpage(s) | https://doi.org/10.1116/1.5042261 |
| Volume Number | 36 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
