SELF-ALIGNED SINGLE CRYSTAL CONTACTED HIGH-SPEED SILICON BIPOLAR TRANSISTOR UTILIZING SELECTIVE (SEG) AND CONFINED SELECTIVE EPITAXIAL GROWTH (CLSEG) (1992)

Single crystal silicon contacted double self-aligned bipolar junction transistor by selective epitaxial growth

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A novel high-speed silicon bipolar transistor utilizing SEG and CLSEG

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A Double Self-Aligned Silicon Bipolar Transistor Utilizing Selectively-Grown Single Crystal Extrinsic Contacts

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Use of oxynitride dielectric to maximise the growth rate of selective epitaxial base layer in a self-aligned double-polysilicon sige bipolar transistors.

Application of silane-only selective epitaxy to the fabrication of fully self-aligned silicon bipolar transistors

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Single-poly bipolar transistor with selective epitaxial silicon and chemo-mechanical polishing

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Novel Bipolar Transistor Isolation Structure Using Combined Selective Epitaxial Growth and Planarization Technique

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Vertical bipolar transistors fabricated in local silicon on insulator films prepared using confined lateral selective epitaxial growth (CLSEG)

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