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Extremely low surface recombination velocities on crystalline silicon wafers realized by catalytic chemical vapor deposited SiNx/a-Si stacked passivation layers
| Content Provider | Semantic Scholar |
|---|---|
| Author | Koyama, Koichi Ohdaira, Keisuke Matsumura, Hideki |
| Copyright Year | 2010 |
| Abstract | Catalytic chemical vapor deposition (Cat-CVD), also called hot-wire CVD, yields silicon-nitride/amorphous-silicon (SiNx/a-Si) stacked layers with remarkably low surface recombination velocities (SRVs) of lower than 1.5 cm/s for n-type crystalline Si (c-Si) wafers, and lower than 9.0 cm/s for p-type wafers. The temperature throughout the formation of stacked layers is lower than 250 °C. The usage of a-Si films significantly enhances the effective carrier lifetime of c-Si wafers, and SiNx films are also essential for reducing SRVs to such low levels. |
| Starting Page | 082108 |
| Ending Page | 082108 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.3483853 |
| Alternate Webpage(s) | https://dspace.jaist.ac.jp/dspace/bitstream/10119/9884/1/15668.pdf |
| Alternate Webpage(s) | http://chglib.icp.ac.ru/subjex/2012/pdf09/AplPhysLet-2010-96(8)082108.pdf |
| Alternate Webpage(s) | https://doi.org/10.1063/1.3483853 |
| Volume Number | 97 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |