NDLI: Modulation response of a long-cavity, gain-levered quantum-dot semiconductor laser.

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Modulation response of a long-cavity, gain-levered quantum-dot semiconductor laser.

Content Provider	Semantic Scholar
Author	Pochet, Michael C. Usechak, Nicholas G. Schmidt, John C. Lester, Luke F.
Copyright Year	2014
Abstract	The gain-lever effect enhances the modulation efficiency of a semiconductor laser when compared to modulating the entire laser. This technique is investigated in a long-cavity multi-section quantum-dot laser where the length of the modulation section is varied to achieve 14:2, 15:1 and 0:16 gain-to-modulation section ratios. In this work, the gain-levered modulation configuration resulted in an increase in modulation efficiency by as much as 16 dB. This investigation also found that the 3-dB modulation bandwidth and modulation efficiency are dependent on the modulation section length of the device, indicating the existence of an optimal gain-to-modulation section ratio. The long cavity length of the multi-section laser yielded a distinctive case where characteristics of both the gain-lever effect and spatial effects are observed in the modulation response. Here, spatial effects within the cavity dominated the small-signal modulation response close to and above the cavity's free-spectral range frequency, whereas the gain-lever effect influenced the modulation response throughout the entirety of the response.
Starting Page	677
Ending Page	677
Page Count	1
File Format	PDF HTM / HTML
Alternate Webpage(s)	https://vtechworks.lib.vt.edu/bitstream/handle/10919/46935/oe-22-2-1726.pdf?sequence=1
PubMed reference number	24515179v1
Alternate Webpage(s)	https://doi.org/10.1364/OE.22.001726
DOI	10.1364/oe.22.001726
Journal	Optics express
Volume Number	22
Issue Number	2
Language	English
Access Restriction	Open
Subject Keyword	Body cavities Dental caries Lasers, Semiconductor Numerous Semiconductors
Content Type	Text
Resource Type	Article

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