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Ellipsometric study of polycrystalline silicon films prepared by low-pressure chemical vapor deposition
| Content Provider | Semantic Scholar |
|---|---|
| Author | Petrik, Péter Lohner, T. Fried, Miklós Biró, László Péter Khanh, N. Q. Gyulai, József Lehnert, Wolfgang Schneider, Claus Ryssel, Heiner |
| Copyright Year | 2000 |
| Abstract | Polysilicon layers with thicknesses between 8 and 600 nm deposited by low-pressure chemical vapor deposition at temperatures ranging from 560 to 640 °C were characterized by spectroscopic ellipsometry (SE) to determine the layer thicknesses and compositions using multilayer optical models and the Bruggeman effective-medium approximation. The dependence of the structural parameters on the layer thickness and deposition temperature have been investigated. A better characterization of the polysilicon layer is achieved by using the reference data of fine-grained polysilicon in the optical model. The amount of voids in the polysilicon layer was independently measured by Rutherford backscattering spectrometry (RBS). The SE and RBS results show a good correlation. The comparison of the surface roughness measured by SE and atomic force microscopy (AFM) shows that independently of the AFM window sizes, a good correlation of the roughness determined by SE and AFM was obtained. |
| Starting Page | 1734 |
| Ending Page | 1742 |
| Page Count | 9 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.372085 |
| Volume Number | 87 |
| Alternate Webpage(s) | http://www.nanotechnology.hu/reprint/jap_87_1734.pdf |
| Alternate Webpage(s) | https://doi.org/10.1063/1.372085 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
