Poprawa jakości polerowanych płytek SiC metodą chemicznego utleniania i obróbki termicznej. Badania jakości powierzchni metodami rentgenowskimi

Content Provider	Semantic Scholar
Author	Sakowska, H. Mazur, Kamila Teklinska, Dominika Wierzchowski, Witold Wieteska, Krzysztof Gala, Max
Copyright Year	2012
Abstract	Experimental results of chemical oxidation and thermal annealing and their in uence on the improvement of the quality of the polished surface of silicon carbide (SiC) wafers have been presented. e Fenton process was used in the process of chemical oxidation. Hydroxyl radicals (OH·) generated during the decomposition of a hydrogen peroxide (H2O2) solution were the oxidizing agents. e quality of the roughness parametres was improved. A er thermal annealing in vacuum at T 900oC a very smooth surface was obtained, subsurface damaged layers were reduced, with Ra ~ 0,1 nm. Both the crystallographic quality and roughness of the layers were investigated using X-ray methods. e surface smoothness before and a er processing was measured using an atomic force microscope (AFM) and an optical microscope.
Starting Page	3
Ending Page	10
Page Count	8
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Alternate Webpage(s)	http://itme.host.migomedia.com/tl_files/Biblioteka/ME/Materialy%20Elektroniczne/ME_2_12.pdf
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article