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RDF Analysis of Small-Signal Equivalent Circuit Parameters in MOSFET Devices
| Content Provider | Semantic Scholar |
|---|---|
| Author | Andrei, Paul |
| Copyright Year | 2007 |
| Abstract | A perturbation technique is developed for the analysis of random doping induced fluctuations (RDF) of small-signal equivalent circuit parameters in semiconductor devices. This technique is based on the computation of the doping sensitivity functions of parameters of interest by using the admittance matrix parameters and is applied to the study of RDF of equivalent circuit parameters in a 40-nm channel length MOSFET. The presented technique can be easily extended to the analysis of RDF in other semiconductor devices such as SOI, HEMT, etc. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://in4.iue.tuwien.ac.at/pdfs/sispad2007/pdfs/449.pdf |
| Language | English |
| Access Restriction | Open |
| Subject Keyword | Computation (action) Doping (semiconductor) Doping in Sports Equivalent circuit Resource Description Framework Semiconductor device Silicon on insulator Small-signal model |
| Content Type | Text |
| Resource Type | Article |
