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Efficiency and reliability of Fowler-Nordheim tunnelling in CMOS floating-gate transistors
| Content Provider | Semantic Scholar |
|---|---|
| Author | Rumberg, Brandon |
| Copyright Year | 2013 |
| Abstract | ELECT Floating-gate transistors are increasingly used for digital and/or analogue non-volatile memory in standard CMOS integrated circuits. The mask design of the floating-gate’s tunnelling junction, where erasure and/or writing occur, is examined. Aided by static and transient tunnelling current measurements for a variety of tunnelling junctions, recommendations for constructing these junctions to minimise the duration, power consumption and oxide degradation of programming are presented. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://community.wvu.edu/~dwgraham/publications/papers/fg_tunnelling_el2013.pdf |
| Language | English |
| Access Restriction | Open |
| Subject Keyword | Analog CMOS Categories Elegant degradation Integrated circuit Memory, Episodic Non-volatile memory The Mask Transistor Volatile memory |
| Content Type | Text |
| Resource Type | Article |
