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A Low-Voltage SiGe BiCMOS 77-GHz Automotive Radar Chipset
| Content Provider | Semantic Scholar |
|---|---|
| Author | Nicolson, S. T. Pruvost, Sébastien Danelon, V. Chevalier, Pascal Garcia, Patrice Chantre, Alain Sautreuil, Bernard Voinigescu, S. P. |
| Copyright Year | 2008 |
| Abstract | This paper presents a complete 2.5-V 77-GHz chipset for Doppler radar and imaging applications fabricated in SiGe HBT and SiGe BiCMOS technologies. The chipset includes a 123-mW single-chip receiver with 24-dB gain and an IP1 dB of -21.7 dBm at 76-GHz local oscillator (LO) and 77-GHz RF, 4.8-dB double-sideband noise figure at 76-GHz LO and 1-GHz IF, and worst case -98.5 dBc/Hz phase noise at 1-MHz offset over the entire voltage-controlled oscillator tuning range at room temperature. Monolithic spiral inductors and transformers result in a receiver core area of 450 mum times 280 mum. For integration of an entire 77-GHz transceiver, a power amplifier with 19-dB gain, +14.5-dBm saturated output power, and 15.7% power-added efficiency is demonstrated. Frequency divider topologies for 2.5-V operation are investigated and measurement results show a 105-GHz static frequency divider consuming 75 mW, and a 107-GHz Miller divider consuming 33 mW. Measurements on all circuits confirm operation up to 100 deg C. Low-power low-noise design techniques for each circuit block are discussed. |
| Starting Page | 1092 |
| Ending Page | 1104 |
| Page Count | 13 |
| File Format | PDF HTM / HTML |
| DOI | 10.1109/TMTT.2008.921268 |
| Volume Number | 56 |
| Alternate Webpage(s) | http://www.eecg.toronto.edu/~sorinv/papers/Sean_MTT_may08.pdf |
| Alternate Webpage(s) | https://doi.org/10.1109/TMTT.2008.921268 |
| Journal | IEEE Transactions on Microwave Theory and Techniques |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
