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Roughness Produced by Nitrogen Atom Incorporation at a SiO 2 / Si ( 100 ) Interface
| Content Provider | Semantic Scholar |
|---|---|
| Author | Kouta Inoue Keita Furuno Hirohisa Kato Naoyoshi Tamura Ken’ichi Seiji Sano Takeo Hattori |
| Copyright Year | 2001 |
| Abstract | Interface Roughness Produced by Nitrogen Atom Incorporation at a SiO2/Si(100) Interface Kouta INOUE, Keita FURUNO, Hirohisa KATO, Naoyoshi TAMURA 1, Kenichi HIKAZUTANI 1, Seiji SANO1 and Takeo HATTORI Department of Electrical and Electronic Engineering, Musashi Institute of Technology, 1-28-1 Tamazutsumi, Setagaya-ku, Tokyo 158-8557, Japan 1Process Development Department, Technology Development Division, Semiconductor Group, Fujitsu Ltd., 1500 Mizono, Tado-cho, Kuwana-gun, Mie 511-0192, Japan |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://nanosioe.ee.ntu.edu.tw/download/Paper/!!!others/!!paper/roughness/JJAPII40_L539_2001.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |