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Magnesium incorporation in GaN grown by rf-plasma-assisted molecular-beam epitaxy
| Content Provider | Semantic Scholar |
|---|---|
| Author | Ptak, Aaron J. Myers, T. Harrison Romano, Linda T. Walle, Chris G. Van De |
| Copyright Year | 2001 |
| Abstract | A pronounced dependence of Mg incorporation on surface polarity was observed in a series of Mg step-doped epitaxial GaN layers grown by rf-plasma-assisted molecularbeam epitaxy. Incorporation was studied for both (0001), or Ga-polarity and (000-1), or N-polarity, orientations. Up to a factor of 30 times more Mg was incorporated on the Gapolarity under certain conditions, as determined by secondary ion mass spectrometry. Measurements indicate surface accumulation of Mg occurs during growth, with stable accumulations of close to a monolayer of Mg on the Ga-polarity surface. The presence of atomic hydrogen during growth significantly increased incorporation of Mg without also incorporating potentially compensating hydrogen. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://www.as.wvu.edu/phys/mbe/papers/49.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
