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Thermal Characteristics of III/V Thin Film Edge Emitting Lasers on Silicon
| Content Provider | Semantic Scholar |
|---|---|
| Author | Palit, Sabarni Kirch, Jeremy Daniel Mawst, Luke J. Kuech, Thomas F. Jokerst, Nan Marie |
| Copyright Year | 2010 |
| Abstract | We present thermal characteristics of a strain compensated InGaAs/GaAs SQW-SCH thin film laser, integrated onto silicon with a metal- metal interface, and contacts patterned on both sides of the epitaxial layer to improve current confinement. A threshold current density of 262 A/cm 2 is achieved for a 50 m ridge laser of 800 m cavity length, with a lasing wavelength of 1001.52 nm. Lasing was achieved up to 60 oC, and a characteristic temperature To= 49.8 oK was obtained. Theoretical modeling estimated a junction temperature of 67 C for CW operation. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://www.ijmot.com/ijmot/uploaded/iisdkrewasdf.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |