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Fabrication and characterization of amorphous Si/crystalline Si heterojunction devices for photovoltaic applications
| Content Provider | Semantic Scholar |
|---|---|
| Author | Baroughi, Mahdi Farrokh Jeyakumar, R. P. Suresh Vygranenko, Yuri Khalvati, Farzad Sivoththaman, Siva |
| Copyright Year | 2004 |
| Abstract | Heterojunction diode and heterojunction photovoltaic cell structures are fabricated with (n+)a-Si/(i)a-Si and rf-sputtered indium-tin-oxide/Al films deposited on p-type crystalline Si using a plasma-enhanced chemical vapor deposition cluster tool system. Dark current–voltage characteristics of the heterojunction diodes are used to determine the carrier transport mechanisms. Experimental results showed the current is recombination-dominated at low forward bias (VA<0.25 V at 27 °C), multitunneling capture emission (MTCE)-dominated at medium bias (0.25 |
| Starting Page | 1015 |
| Ending Page | 1019 |
| Page Count | 5 |
| File Format | PDF HTM / HTML |
| DOI | 10.1116/1.1701854 |
| Volume Number | 22 |
| Alternate Webpage(s) | http://individual.utoronto.ca/khalvati/pubs/Vacuum_Science.pdf |
| Alternate Webpage(s) | https://doi.org/10.1116/1.1701854 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |