Loading...
Please wait, while we are loading the content...
Similar Documents
Characterizations of gallium-doped ZnO films on glass substrate prepared by atmospheric pressure metal-organic chemical vapor deposition
| Content Provider | Semantic Scholar |
|---|---|
| Author | Huang, Y. C. Chen, Hung-Hsin Lan, Shan-Ming Liao, Sen-Mao Huang, Y. J. Ku, Chien-Te Chen, M. G. Yang, Tsun-Neng Chiang, Chin-Chen |
| Copyright Year | 2009 |
| Abstract | Abstract Ga-doped zinc oxide (ZnO:Ga) films were grown on glass substrate by atmospheric pressure metal-organic chemical vapor deposition (AP-MOCVD) using diethylzinc and water as reactant gases and triethyl gallium (TEG) as an n-type dopant gas. The structural, electrical and optical properties of ZnO:Ga films obtained at various flow rates of TEG ranging from 1.5 to 10 sccm were investigated. X-ray diffraction patterns and scanning electron microscopy images indicated that Ga-doping plays an important role in forming microstructures in ZnO films. A smooth surface with a predominant orientation of (101) was obtained for the ZnO:Ga film grown at a flow rate of TEG = 7.5 sccm. Moreover, a lowest resistivity of 3.6 × 10 − 4 Ω cm and a highest mobility of 30.4 cm 2 V − 1 s − 1 were presented by the same sample, as evaluated by Hall measurement. Otherwise, as the flow rate of TEG was increased, the average transmittance of ZnO:Ga films increased from 75% to more than 85% in the wavelength range of 400–800 nm, simultaneously with a blue-shift in the absorption edge. The results obtained suggest that low-resistivity and high-transparency ZnO films can be obtained by AP-MOCVD using Ga-doping sufficiently to make the films grow degenerate and effect the Burstein–Moss shift to raise the band-gap energy from 3.26 to 3.71 eV. |
| Starting Page | 5537 |
| Ending Page | 5542 |
| Page Count | 6 |
| File Format | PDF HTM / HTML |
| DOI | 10.1016/j.tsf.2009.03.194 |
| Volume Number | 517 |
| Alternate Webpage(s) | https://ir.nctu.edu.tw/bitstream/11536/6928/1/000267182700026.pdf |
| Alternate Webpage(s) | https://doi.org/10.1016/j.tsf.2009.03.194 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
