Field Emission Behaviour of the Single Wall Carbon Nanotubes Grown by Plasma Enhanced Chemical Vapour Deposition (PECVD) System

Content Provider	Semantic Scholar
Author	Kumar, Avshish Parveen, Shama Husain, Samina Ali, Javid Husain, Mushahid
Copyright Year	2013
Abstract	The unique electrical, thermal and mechanical properties of carbon nanotubes (CNTs) are expected to find many applications not only for academic interest in physics and chemistry but also for industrial applications such as field effect transistors[1-3], field emission displays [4], sensors [5-7], nano-probes and various types of electronic devices [8, 9]. In such applications, the standard method for single wall carbon nanotube (SWCNT) production rely on co-vaporization of graphite and transition metal catalysts in an inert gas atmosphere, either by an electrical arc [10] or laser vaporization [11]. Dai and co-workers [12, 13] have reported the production of individual SWCNTs. Lieber and coworkers [14] produced individual SWCNTs for the application in the scanning probe microscope. However, during the last few years, chemical vapor deposition (CVD) using hydrocarbon as feedstock has emerged as a promising alternative for SWCNT synthesis. The advantages of CVD are lower preparation temperatures, simple equipment, better prospective for large-scale production, and the possibility to grow long and impurity free carbon nanotubes in specified locations on a substrate for incorporation into electronic devices. However, the synthesis of CNTs requires temperature of 700-1000 C using thermal chemical vapour deposition (TCVD) method. This temperature requirement far exceeds the temperature limit of microelectronic, which is typically 400-500 C. For this purpose, Plasma enhanced chemical vapour deposition (PECVD) method has been proposed as an alternative method to further reducing of the synthesis temperature. Kato et al. [15] successfully grew the SWCNTs at temperature of 550 C using PECVD. Li et al. [16] grew the SWCNTs at temperature of 600 C. The plasmatic energy in PECVD efficiently dissociates gas molecules at lower temperatures and the synthesis of carbon nanotubes might occur at lower temperatures. The presence of built-in electric field in a plasma sheath aligns the growing CNTs along the field lines. Thus, PECVD method favours low temperature synthesis of vertically aligned carbon nanotubes (VA-CNTs). 2. EXPERIMENTAL
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