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Coexistence of two donor packing motifs in the stable molecular metal a-‘ pseudo-k ’-( BEDT-TTF ) 4 ( H 3 O ) [ Fe ( C 2 O 4 ) 3 ] $ C 6 H 4 Br 2 †
| Content Provider | Semantic Scholar |
|---|---|
| Author | Zorina, Leokadiya V. Khasanov, Salavat S. Simonov, Sergey V. Shibaeva, Rimma P. Zverev, Vladimir N. Canadell, Enric Prokhorova, Tatiana G. Yagubskii, Eduard B. |
| Copyright Year | 2011 |
| Abstract | The crystal and electronic structure of a new radical cation salt a-‘pseudo-k’-(BEDTTTF)4H3O[Fe(C2O4)3]$C6H4Br2 have been studied. The new triclinic crystals contain two conducting organic layers which are characterized by different BEDT-TTF packing motifs: a ‘pseudo-k’-layer which is composed of charged dimers and neutral monomers of BEDT-TTF orthogonal to each other and an a-layer which consists of inclined, uniformly charged BEDT-TTF stacks. According to electronic band structure calculations, the ‘pseudo-k’ layer has a large gap between the HOMO bands at the Fermi level and should be associated with an activated conductivity. In contrast, the a-layer is a strongly two-dimensional electronic system with uniform intermolecular interactions. The absence of any nesting in the Fermi surface of the a-layer suggests that this salt should be a stable metal down to low temperatures. Metallic properties have been observed in the crystals in the 300–0.4 K temperature range. Besides, well pronounced Shubnikov–de Haas oscillations of the magnetoresistance have been revealed at B > 8 T. The salt investigated is a new phase in the (BEDT-TTF)4A I[MIII(C2O4)3]G family of organic molecular conductors with paramagnetic anions and different guest solvent molecules G in the anion layer. Structural features of the new a-‘pseudo-k’-crystals and other known phases of the family (b00, ‘pseudo-k’ and a-b00) have been compared. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://www.issp.ac.ru/lek/zverev/art71-RE.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |