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Effects of Strain on Notched Zigzag Graphene Nanoribbons
| Content Provider | Semantic Scholar |
|---|---|
| Author | Baldwin, J. P. C. Hancock, Yolandra |
| Copyright Year | 2013 |
| Abstract | The combined effects of an asymmetric (square or V-shaped) notch and uniaxial strain are studied in a zigzag graphene nanoribbon (ZGNR) device using a generalized tight-binding model. The spin-polarization and conductance-gap properties, calculated within the Landauer–Büttiker formalism, were found to be tunable for uniaxial strain along the ribbon-length and ribbon-width for an ideal ZGNR and square (V-shaped) notched ZGNR systems. Uniaxial strain along the ribbon-width for strains≥10% initiated significant notch-dependent reductions to the conduction-gap. For the V-shaped notch, such strains also induced spin-dependent changes that result, at 20% strain, in a semi-conductive state and metallic state for each respective spin-type, thus demonstrating possible quantum mechanisms for spin-filtration. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://www.mdpi.com/2073-4352/3/1/38/pdf |
| Alternate Webpage(s) | http://www.mdpi.com/2073-4352/3/1/38/pdf/ |
| Language | English |
| Access Restriction | Open |
| Subject Keyword | Conductance (graph) Formal system Graphene Landauer's principle Nanoribbons Semiconductor industry Spin model Tight binding filtration width |
| Content Type | Text |
| Resource Type | Article |