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Application of Scanning Tunneling/atomic Force Microscope Nano- Oxidation Process to Room Temperature Operated Single Electron Transistor and Other Devices
| Content Provider | Semantic Scholar |
|---|---|
| Author | Matsumoto, Kazuhiko |
| Copyright Year | 1998 |
| Abstract | Using a scanning tunneling microscope (STM) tip / atomic force microscope (AFM) cantilever as a cathode, the surface of titanium metal was oxidized to form a few tens of nanometers wide oxidized titanium line, which works as an energy barrier for the electron. Single electron transistors (SET), photoconductive switches, and high electron mobility transistors (HEMT) are fabricated using this process. The fabricated SET operates at room temperature showing the Coulomb gap and staircase with 160 mV periods, and the Coulomb oscillation with 400 mV periods. The fabricated photo-conductive switch shows a full width at half maximum (FWHM) response of 380 femtoseconds at a bias voltage of 10 V. The drain current of HEMT was controlled by the oxidized semiconductor wire on the channel region formed by this fabrication process. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://www.ecmjournal.org/smi/pdf/smi98-07.pdf |
| Alternate Webpage(s) | http://ecmjournal.org/journal/smi/pdf/smi98-07.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
