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plasma-enhanced atomic layer deposition of tin oxide electron selective layers for highly e ffi cient planar perovskite solar cells †
| Content Provider | Semantic Scholar |
|---|---|
| Author | Wang, Changlei Zhao, Dewei Grice, Corey R. Liao, Weiqiang Cimaroli, Alexander J. Shrestha, Niraj Roland, Paul J. Chen, Jing Yu, Zhen Hua Cheng, Nian Ellingson, Randy J. Zhao, Xingzhong Yan, Yanfa |
| Copyright Year | 2016 |
| Abstract | Recent progress has shown that low-temperature processed tin oxide (SnO2) is an excellent electron selective layer (ESL) material for fabricating highly efficient organic–inorganic metal-halide perovskite solar cells with a planar cell structure. Low-temperature processing and a planar cell structure are desirable characteristics for large-scale device manufacturing due to their associated low costs and processing simplicity. Here, we report that plasma-enhanced atomic layer deposition (PEALD) is able to lower the deposition temperature of SnO2 ESLs to below 100 C and still achieve high device performance. With C60-self-assembled monolayer passivation, our PEALD SnO2 ESLs deposited at 100 C led to average power conversion efficiencies higher than 18% (maximum of 19.03%) and 15% (maximum of 16.80%) under reverse voltage scan for solar cells fabricated on glass and flexible polymer substrates, respectively. Our results thus demonstrate the potential of the low-temperature PEALD process of SnO2 ESLs for large-scale manufacturing of efficient perovskite solar cells. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://astro1.panet.utoledo.edu/~relling2/PDF/pubs/low_temperature_PEALD_SnO2_ESL_perovskite_SCs_(2016)_JMC-A.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
