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The properties of boron carbide/silicon heterojunction diodes fabricated by Plasma-Enhanced Chemical Vapor Deposition
| Content Provider | Semantic Scholar |
|---|---|
| Author | Lee, Sunwoo Dowben, Peter A. |
| Copyright Year | 1994 |
| Abstract | Abstractp-n heterojunction diodes have been fabricated from boron carbide (B1−xCx) and n-type Si(111). Boron carbide thin films were deposited on Si(111) using Plasma-Enhanced Chemical Vapor Deposition (PECVD) from nido-pentaborane (B5H9) and methane (CH4). Composition of boron carbide thin films was controlled by changing the relative partial pressure ratio between nido-pentaborane and methane. The properties of the diodes were strongly affected by the composition and thickness of boron carbide layer and operation temperatures. Boron carbide/silicon heterojunction diodes show rectifying properties at temperatures below 300° C. The temperature dependence of reverse current is strongly dependent upon the energy of the band gap of the boron carbide films. |
| Starting Page | 223 |
| Ending Page | 227 |
| Page Count | 5 |
| File Format | PDF HTM / HTML |
| DOI | 10.1007/BF00324380 |
| Volume Number | 58 |
| Alternate Webpage(s) | https://page-one.springer.com/pdf/preview/10.1007/BF00324380 |
| Alternate Webpage(s) | https://doi.org/10.1007/BF00324380 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
