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High-rate chemical vapor deposition of nanocrystalline silicon carbide films by radio frequency thermal plasma
| Content Provider | Semantic Scholar |
|---|---|
| Author | Liao, F. F. Park, Sung Hyun Larson, John Michael Zachariah, Michael R. Girshick, Steven L. |
| Copyright Year | 2003 |
| Abstract | Abstract Silicon carbide films were deposited by radio frequency thermal plasma chemical vapor deposition (CVD) at rates up to several hundred micrometers per hour over a 40-mm diameter substrate. The films were primarily β-phase SiC. Film morphology was characterized by columnar growth terminating in hemispherical surfaces. The average crystallite size as determined by X-ray diffraction line broadening ranged from about 5 to 100 nm, and increased with increasing substrate temperature. The film growth rate varied linearly with the input flow rate of SiCl 4 precursor, and appeared to be independent of substrate temperature over the range 680–1215 °C. |
| Starting Page | 1982 |
| Ending Page | 1986 |
| Page Count | 5 |
| File Format | PDF HTM / HTML |
| DOI | 10.1016/S0167-577X(02)01116-3 |
| Alternate Webpage(s) | https://mrzgroup.ucr.edu/sites/g/files/rcwecm2316/files/2019-02/2003_MatSciLet.pdf |
| Alternate Webpage(s) | http://www.me.umn.edu/people/pdf/Liao%2003.pdf |
| Alternate Webpage(s) | http://www.me.umn.edu/~mrz/pdf_papers/2003_MatSciLet.pdf |
| Alternate Webpage(s) | https://doi.org/10.1016/S0167-577X%2802%2901116-3 |
| Volume Number | 57 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
