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Thin Films on SrTiO 3 and Silicon Substrates
| Content Provider | Semantic Scholar |
|---|---|
| Author | Lee, Ho Nyung Pignolet, Alain Senz, St. Harnagea, Catalin Hesse, Dietrich |
| Copyright Year | 2000 |
| Abstract | Anisotropies of the properties of the bismuth-layered perovskite SrBi2Ta2O9 (SBT) have been investigated using epitaxial thin films grown by pulsed laser deposition both on conducting Nb-doped SrTiO3 (STO) single crystal substrates and on Si(100) substrates. It has been found that the three-dimensional epitaxy relationship SBT(001)||STO(001); SBT ] 0 1 1 [ ||STO[100] can be applied to all SBT thin films on STO substrates of (001), (011), and (111) orientations. An about 1.7 times larger remanent polarization was obtained in (103)-oriented SBT films than in that of (116) orientation, while the (001)-oriented SBT films revealed no ferroelectricity along their c-axis. Non-c-axis-oriented SBT films with a well-defined (116) orientation were also grown on silicon substrates for the first time. They were deposited on Si(100) covered with a conducting SrRuO3 (110) bottom electrode on a YSZ(100) buffer layer. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://www-old.mpi-halle.mpg.de/mpi/publi/pdf/637_01.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |