NDLI: Importance of spin-orbit interaction for the electron spin relaxation in organic semiconductors.

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Importance of spin-orbit interaction for the electron spin relaxation in organic semiconductors.

Content Provider	Semantic Scholar
Author	Nuccio, Laura Willis, Maureen Schulz, Lee Fratini, Simone Messina, Fabrizio D'Amico, Melania Pratt, Francis L. Lord, J. S. Mckenzie, Ian Loth, Michael Purushothaman, Balaji Anthony, John E. Heeney, Martin Wilson, R. Marshall Hernández, Ignacio Cannas, Marco Sedlak, Kamil Kreouzis, Theo Gillin, W. P. Bernhard, Christian Drew, Alan J.
Copyright Year	2013
Abstract	Despite the great interest organic spintronics has recently attracted, there is only a partial understanding of the fundamental physics behind electron spin relaxation in organic semiconductors. Mechanisms based on hyperfine interaction have been demonstrated, but the role of the spin-orbit interaction remains elusive. Here, we report muon spin spectroscopy and time-resolved photoluminescence measurements on two series of molecular semiconductors in which the strength of the spin-orbit interaction has been systematically modified with a targeted chemical substitution of different atoms at a particular molecular site. We find that the spin-orbit interaction is a significant source of electron spin relaxation in these materials.
Starting Page	216602
Ending Page	216602
Page Count	1
File Format	PDF HTM / HTML
DOI	10.1103/PhysRevLett.110.216602
PubMed reference number	23745907
Journal	Medline
Volume Number	110
Issue Number	21
Alternate Webpage(s)	http://doc.rero.ch/record/32510/files/ber_iso.pdf
Alternate Webpage(s)	https://repositorio.unican.es/xmlui/bitstream/handle/10902/4395/Importance%20of%20spin-orbit%20interaction%20for%20the%20electron%20spin%20relaxation%20in%20organic.pdf?isAllowed=y&sequence=1
Alternate Webpage(s)	https://doi.org/10.1103/PhysRevLett.110.216602
Journal	Physical review letters
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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