Difluorosilylene as a Precursor for the Chemical Vapour Deposition of Titanium Silicide.

Content Provider	Semantic Scholar
Author	Chen, Chih Tsung Yu, Joanne L. Chiu, Hao-Chih
Copyright Year	1993
Abstract	Transition-metal silicides have potential application in very large scale integrated circuits as metal-semiconductor interconnections and as low-resistivity gates because they are good conductors, they are chemically stable at high temperature and they are resistant to corrosion and degradation.' TiSi, has widespread application and interest because it has the lowest resistivity of the silicides., Chemical vapour deposition is a good method of forming self-aligned titanium silicide films on silicon surfaces. Traditional methods involve the use of SiH, as the silicon source and TiC1, as the metal source at 700 '3C.3 Difluorosilylene, SiF,, is known to disproportionate to SiF, and Si at 650 "C., We recently found that the best temperature range for Si deposition from SiF, was 350-400°C.5 The silicon films thus obtained were found to be amorphous by XRD. ESCA analysis showed a peak characteristic for silicon oxide in addition to the peak of silicon. The Auger electron spectroscopy depth profile showed that the oxygen content dropped below 1 atom% after 10 s of sputter time (E ,= 3 keV). The fluorine content was negligible throughout the profile. The IR spectrum also showed the complete absence of v(Si-F) bands. This would suggest a new route to the synthesis of silicide thin films under milder conditions. We are particularly interested in systems where difluorosilylene and a co-precursor have a certain chemical interaction in the gas phase before deposition takes place. Titanium tetrachloride, was chosen as a co-precursor for titanium silicide films because it volatilizes readily and is known to react with SiF, in the gas phase.? Chemical vapour deposition reaction of SiF, and TiC1, was carried out in a Pyrex vacuum system with the reaction zone being heated externally. Difluorosilylene was generated by the reaction of SiF, and Si at 11 50 "C (with an approximate yield of ~ O Y O ) . ~ Difluorosilylene and the vapour of TiCl, were introduced into the system and thin films of TiSi, were formed on quartz, graphite and Si slides mounted in the heated zone (450-600°C). The best ratio of partial pressure was found to
Starting Page	983
Ending Page	984
Page Count	2
File Format	PDF HTM / HTML
DOI	10.1002/chin.199304016
Volume Number	24
Alternate Webpage(s)	http://nthur.lib.nthu.edu.tw/dspace/retrieve/113849/52.pdf
Alternate Webpage(s)	https://ir.nctu.edu.tw/bitstream/11536/3309/1/A1992JN40600015.pdf
Alternate Webpage(s)	https://doi.org/10.1002/chin.199304016
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article