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Functionalized Single-Walled Carbon-Nanotube-Blended P3HT-Based Thin-Film Transistors With Multiwalled Carbon-Nanotube Source and Drain Electrodes
| Content Provider | Semantic Scholar |
|---|---|
| Author | Chang, Chia-Hao Chien, Chao-Hsin |
| Copyright Year | 2011 |
| Abstract | We demonstrate the superior performance of thin-film transistors with a functionalized single-walled carbon-nanotube-blended poly(3-hexylthiophene) (F-SWCNT-P3HT) channel and multiwalled CNT source and drain electrodes (MWCNT S/Ds). Compared with transistors with a P3HT channel and gold electrodes, the mobility of transistors with an F-SWCNT-P3HT channel and MWCNT S/Ds is increased by more than one order of magnitude, i.e., from 0.0052 to 0.072 cm2/V·s. This improvement results not only from the well-known fast carrier transport assisted by the blend of F-SWCNTs but also, more importantly, from the reduced contact resistance between P3HT and MWCNT S/Ds. |
| Starting Page | 1457 |
| Ending Page | 1459 |
| Page Count | 3 |
| File Format | PDF HTM / HTML |
| DOI | 10.1109/LED.2011.2163054 |
| Volume Number | 32 |
| Alternate Webpage(s) | https://ir.nctu.edu.tw/bitstream/11536/18872/1/000295340300047.pdf |
| Alternate Webpage(s) | https://doi.org/10.1109/LED.2011.2163054 |
| Journal | IEEE Electron Device Letters |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
