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Ferroelectricity in intergrowth Bi 3 TiNbO 9 – Bi 4 Ti 3 O 12 ceramics
| Content Provider | Semantic Scholar |
|---|---|
| Author | Yi, Zhang Wang, Y.-H. Li, Ying Xia Yin, Qing Rui |
| Copyright Year | 2006 |
| Abstract | Monophase intergrowth Bi3TiNbO9–Bi4Ti3O12 BTN-BIT ceramics were synthesized by solid-state reaction method. In the temperature dependence of dielectric permittivity, two anomalies appeared at 945 and 1114 K, respectively. The ferroelectric hysteresis loop measurement revealed that the 2Pr is 20 C/cm 2, nearly as twice as that of the BTN ceramic. The crystal structure analysis indicated that the enhanced octahedral distortion along the a axis is the main contribution to the ferroelectricity of BTN-BIT. The increased 2Pr for the BTN-BIT ceramics is ascribed to its larger Ps than that of the BTN and easier domain switching under electric field than that of the BIT. © 2006 American Institute of Physics. DOI: 10.1063/1.2199751 |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://openresearch-repository.anu.edu.au/bitstream/1885/16835/3/01_Yi_Ferroelectricity_in_2006.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
