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InGaAsP avalanche photodetectors for non-gated 1.06 micron photon-counting receivers
| Content Provider | Semantic Scholar |
|---|---|
| Author | Itzler, Mark A. Jiang, Xudong Ben-Michael, Rafael Slomkowski, Krystyna Krainak, Michael A. Wu, Stewart Sun, Xiaoli |
| Copyright Year | 2007 |
| Abstract | For the detection of single photons at 1.06 μm, silicon-based single photon avalanche diodes (SPADs) used at shorter wavelengths have very low single photon detection efficiency (~1 - 2%), while InP/InGaAs SPADs designed for telecommunications wavelengths near 1.5 μm exhibit dark count rates that generally inhibit non-gated (free-running) operation. To bridge this "single photon detection gap" for wavelengths just beyond 1 μm, we have developed high performance, large area (80 - 200 μm diameter) InP-based InGaAsP quaternary absorber SPADs optimized for operation at 1.06 μm. We demonstrate dark count rates that are sufficiently low to allow for non-gated operation while achieving detection efficiencies far surpassing those found for Si SPADs. At a detection efficiency of 10%, 80 μm diameter devices exhibit dark count rates below 1000 Hz and photon counting rates exceeding 1 MHz when operated at -40 °C. |
| File Format | PDF HTM / HTML |
| DOI | 10.1117/12.719471 |
| Volume Number | 6572 |
| Alternate Webpage(s) | https://www.princetonlightwave.com/wp-content/uploads/2016/01/2007-Apr-SPIE6572_0G2007_Itzler-InGaAsP-1.06um-SPAD-1.pdf |
| Alternate Webpage(s) | https://doi.org/10.1117/12.719471 |
| Journal | SPIE Defense + Commercial Sensing |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
