NDLI: Ferroelectric-gate thin-film transistors with Bi3.15Nd0.85Ti3O12 gate insulators on LaNiO3-buffered Si substrates

Content Provider	Semantic Scholar
Author	Song, Hyun Jae Ding, Tong Zhong, X. L. Wang, Jian Bing Li, Benhai Zhang, Yunge Tan, Congbing Zhou, Yan Chun
Copyright Year	2014
Abstract	Ferroelectric-gate thin-film transistors (FGTs) with a stacked oxide structure of ZnO/Bi3.15Nd0.85Ti3O12 (BNT)/LaNiO3 (LNO) on Si substrates have been prepared and characterized. The FGT devices show good electrical properties, such as a large “on” current of 2.5 × 10−4 A and low threshold voltage of 1.1 V. These are mainly attributed to the coupling enhancement of the gate electric field to the channel layer due to a-axis preferential orientation of BNT ferroelectric-gate insulator thin films obtained by using the LNO buffer layer and the relatively good interface properties. The results suggest that ZnO/BNT/LNO/Si structures are well suited for thin-film transistors for future nonvolatile memory applications.
Starting Page	60497
Ending Page	60501
Page Count	5
File Format	PDF HTM / HTML
DOI	10.1039/C4RA11952E
Volume Number	4
Alternate Webpage(s)	https://pubs.rsc.org/en/content/getauthorversionpdf/C4RA11952E
Alternate Webpage(s)	https://doi.org/10.1039/C4RA11952E
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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