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TEM Investigation of Er2O3 Thin Films Grown on Si (100) by Laser MBE
| Content Provider | Semantic Scholar |
|---|---|
| Author | Wang, Xuebao He, Mo-Rigen |
| Copyright Year | 2010 |
| Abstract | Er2O3 is a rare earth metal oxide showing reduced interfacial reactivity with silicon substrate even at temperatures as high as 900oC [1]. It also has a high dielectric constant (10-14) and large band gap. Therefore it is currently being studied as a gate dielectric to replace SiO2 for complementary metaloxide-semiconductor devices. In the past few years, various techniques have been applied to the growth of Er2O3 thin films on Si substrates, such as metal organic chemical vapor deposition [2], electron beam gun evaporation [3], and molecular beam epitaxy (MBE) [4] etc. Depending on different deposition methods and deposition parameters, Er2O3 thin films with preferred orientations of either (110) or (111) on Si(100) were obtained. In this paper, laser MBE was used to prepare Er2O3 thin films on Si(100) and the microstructures, especially the interface layer, of as-received thin films were investigated by means of transmission electron microscopy (TEM) and associated techniques. |
| Starting Page | 1496 |
| Ending Page | 1497 |
| Page Count | 2 |
| File Format | PDF HTM / HTML |
| DOI | 10.1017/s1431927610053626 |
| Alternate Webpage(s) | http://www.imr.cas.cn/yjtd/mxlTeam/yjcg_mxltd/fblw_mxltd/201505/W020150513519959331785.pdf |
| Alternate Webpage(s) | https://doi.org/10.1017/s1431927610053626 |
| Volume Number | 16 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
