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Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry
| Content Provider | Semantic Scholar |
|---|---|
| Author | Fodchuk, Igor M. Fodchuk |
| Copyright Year | 2010 |
| Abstract | Structural changes in silicon single crystals irradiated with high-energy electrons (Е = 18 MeV) were studied. The peculiarities of diffraction reflection curve behaviour and changes in the profiles of isodiffusion lines in high-resolution reciprocal space maps (HR-RSMs) were found as a function of the radiation dose. The generalized dynamic theory of X-ray Bragg-diffraction in crystals comprising defects of several types (spherical and disc-shaped clusters as well as dislocation loops) and a damaged nearsurface layer was used for explanation. |
| Starting Page | 209 |
| Ending Page | 213 |
| Page Count | 5 |
| File Format | PDF HTM / HTML |
| DOI | 10.15407/spqeo13.02.209 |
| Volume Number | 13 |
| Alternate Webpage(s) | http://journal-spqeo.org.ua/n2_2010/v13n2-2010-p209-213.pdf |
| Alternate Webpage(s) | https://doi.org/10.15407/spqeo13.02.209 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |