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Flexible conductive-bridging random-access-memory cell vertically stacked with top Ag electrode, PEO, PVK, and bottom Pt electrode.
| Content Provider | Semantic Scholar |
|---|---|
| Author | Seung, Hyun-Min Kwon, Kyoung-Cheol Lee, Gon-Sub Park, Jea-Gun |
| Copyright Year | 2014 |
| Abstract | Flexible conductive-bridging random-access-memory (RAM) cells were fabricated with a cross-bar memory cell stacked with a top Ag electrode, conductive polymer (poly(n-vinylcarbazole): PVK), electrolyte (polyethylene oxide: PEO), bottom Pt electrode, and flexible substrate (polyethersulfone: PES), exhibiting the bipolar switching behavior of resistive random access memory (ReRAM). The cell also exhibited bending-fatigue-free nonvolatile memory characteristics: i.e., a set voltage of 1.0 V, a reset voltage of -1.6 V, retention time of >1 × 10(5) s with a memory margin of 9.2 × 10(5), program/erase endurance cycles of >10(2) with a memory margin of 8.4 × 10(5), and bending-fatigue-free cycles of ∼1 × 10(3) with a memory margin (I(on)/I(off)) of 3.3 × 10(5). |
| Starting Page | 435204 |
| Ending Page | 435204 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.1088/0957-4484/25/43/435204 |
| PubMed reference number | 25297517 |
| Journal | Medline |
| Volume Number | 25 |
| Issue Number | 43 |
| Alternate Webpage(s) | http://iopscience.iop.org/article/10.1088/0957-4484/25/43/435204/pdf |
| Alternate Webpage(s) | https://doi.org/10.1088/0957-4484%2F25%2F43%2F435204 |
| Journal | Nanotechnology |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
