NDLI: Nanocrystal-semiconductor interface: Atomic-resolution cross-sectional transmission electron microscope study of lead sulfide nanocrystal quantum dots on crystalline silicon

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Nanocrystal-semiconductor interface: Atomic-resolution cross-sectional transmission electron microscope study of lead sulfide nanocrystal quantum dots on crystalline silicon

Content Provider	Semantic Scholar
Author	Lingley, Zachary Mahalingam, K. Lu, Siyuan Brown, Gail J. Madhukar, Anupam
Copyright Year	2013
Abstract	We report on a cross-sectional high resolution transmission electron microscope study of lead sulfide nanocrystal quantum dots (NCQDs) dispersed on electron-transparent silicon nanopillars that enables nearly atomically-resolved simultaneous imaging of the entire composite: the quantum dot, the interfacial region, and the silicon substrate. Considerable richness in the nanocrystal shape and orientation with respect to the substrate lattice is observed. The average NCQD-substrate separation is found to be significantly smaller than the length of the ligands on the NCQDs. Complementary photoluminescence measurements show that light emission from PbS NCQDs on silicon is effectively quenched which we attribute to intrinsic mechanisms of energy and charge transfer from PbS NCQDs to Si.
Starting Page	219
Ending Page	227
Page Count	9
File Format	PDF HTM / HTML
DOI	10.1007/s12274-013-0389-4
Volume Number	7
Alternate Webpage(s)	http://www.thenanoresearch.com/upload/justPDF/0389.pdf
Alternate Webpage(s)	https://doi.org/10.1007/s12274-013-0389-4
Journal	Nano Research
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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