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Silicon nanocrystals by thermal annealing of Si-rich silicon oxide prepared by the LPCVD method
| Content Provider | Semantic Scholar |
|---|---|
| Author | Ivanda, Mile Gebavi, Hrvoje Ristic, Davor Furic, Kresimir Svetozar Ristic, Mira Zonja, Sanja Biljanovic, Petar Gamulin, Ozren Balarin, Maja Montagna, Maurizio Ferarri, M. Righini, Giancarlo C. |
| Copyright Year | 2007 |
| Abstract | Abstract The Si-rich silicon oxide (SiO x ) thin films are prepared on silicon crystalline substrates by low pressure chemical vapor deposition (LPCVD) method. The oxygen concentration x are controlled by the ratio of the partial pressures of N 2 O and SiH 4 gases in the reaction chamber. In order to induce the phase separation on SiO 2 and Si nanostructures the samples are annealed at the temperatures 900–1100 °C. The structural and optical properties of the samples are investigated by Raman and infrared spectroscopy and scanning electron microscopy. |
| Starting Page | 461 |
| Ending Page | 464 |
| Page Count | 4 |
| File Format | PDF HTM / HTML |
| DOI | 10.1016/j.molstruc.2006.09.036 |
| Volume Number | 834 |
| Alternate Webpage(s) | https://bib.irb.hr/datoteka/272379.article.pdf |
| Alternate Webpage(s) | https://www.researchgate.net/profile/Mile_Ivanda/publication/224886334_Silicon_nanocrystals_by_thermal_annealing_of_Si-rich_silicon_oxide_prepared_by_the_LPCVD_method/links/0fcfd50ab791cbac64000000.pdf |
| Alternate Webpage(s) | https://doi.org/10.1016/j.molstruc.2006.09.036 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
