Correlation of Impedance Matching and Optical Emission Spectroscopy during Plasma-Enhanced Chemical Vapor Deposition of Nanocrystalline Silicon Thin Films

Content Provider	Semantic Scholar
Author	Huang, Hung-Jui Chang, Hsueh-Er Hsieh, Yu-Lin Lee, Chien-Chieh Fuh, Yiin-Kuen Li, Tomi T.
Copyright Year	2019
Abstract	In this paper, the correlation of impedance matching and optical emission spectroscopy during plasma-enhanced chemical vapor deposition (PECVD) was systematically investigated in SiH4 plasma diluted by various hydrogen dilution ratios. At the onset of nanocrystallinity in SiH4− depleted plasma condition, the SiH+ radical reached a threshold value as the dominant radical, such that a-Si to nc-Si transition was obtained. Furthermore, the experimental data of impedance analysis showed that matching behavior can be greatly influenced by variable plasma parameters due to the change of various hydrogen dilution ratios, which is consistent with the recorded optical emission spectra (OES) of Hα* radicals. Quadruple mass spectrometry (QMS) and transmission electron microscopy (TEM) were employed as associated diagnostic and characterization tools to confirm the phase transformation and existence of silicon nanocrystals.
Starting Page	305
Ending Page	305
Page Count	1
File Format	PDF HTM / HTML
DOI	10.3390/coatings9050305
Volume Number	9
Alternate Webpage(s)	https://res.mdpi.com/coatings/coatings-09-00305/article_deploy/coatings-09-00305.pdf?attachment=1&filename=
Alternate Webpage(s)	https://doi.org/10.3390/coatings9050305
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article