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Active Electrostatic Discharge (ESD) Device for On-Chip ESD Protection in Sub-Quarter-Micron Complementary Metal-Oxide Semiconductor (CMOS) Process
| Content Provider | Semantic Scholar |
|---|---|
| Author | Ker, Ming-Dou Tseng, Tang-Kui |
| Copyright Year | 2004 |
| Abstract | A novel electrostatic discharge (ESD) protection device with a threshold voltage of ~0 V for complementary metal-oxide semiconductor (CMOS) integrated circuits in sub-quarter-micron CMOS technology is proposed. Quite different to the traditional ESD protection devices, such an active ESD device is originally standing in its turn-on state when the IC is zapped under ESD events. Therefore, such an active ESD device has the fastest turn-on speed and the lowest turn-on voltage to effectively protect the internal circuits with a much thinner gate oxide in future sub-0.1 µm CMOS technology. The proposed active ESD device is fully process-compatible to the general sub-quarter-micron CMOS process. |
| File Format | PDF HTM / HTML |
| DOI | 10.1143/JJAP.43.L33 |
| Alternate Webpage(s) | http://www.ics.ee.nctu.edu.tw/~mdker/Referred%20Journal%20Papers/JJAP-43-L33.pdf |
| Alternate Webpage(s) | https://doi.org/10.1143/JJAP.43.L33 |
| Volume Number | 43 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
