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Study on the instability of organic field-effect transistors based on fluorinated copper phthalocyanine
| Content Provider | Semantic Scholar |
|---|---|
| Author | Yuan, Jian-Ting Zhang, Jidong Wang, Jun Yan, Donghang |
| Copyright Year | 2004 |
| Abstract | The effects of positive and negative gate-bias stress on organic field-effect transistors (OFET) based on tantalum (Ta)/tantalum pentoxide (Ta2O5)/fluorinated copper phthalocyanine (F16CuPc) structure are investigated as a function of stress time and stress temperature. It is shown that gate-bias stress induces a parallel threshold voltage shift (DeltaV(T)) of OFETs without changes of field-effect mobility mu(EF) and sub-threshold slope (DeltaS). The DeltaV(T) is observed to be logarithmically dependent on time at high gate-bias appropriate to OFET operation. More importantly, the shift is directional, namely, be large shift under positive stress and almost do not move under negative stress. The threshold voltage shift is temperature dependent with activation energy of 0.51 eV We concluded that threshold voltage shift of the OFET with F16CuPc as active layer is due to charge trapping in the insulator in which trapped carriers have redistribution. |
| File Format | PDF HTM / HTML |
| DOI | 10.1016/j.tsf.2003.11.295 |
| Alternate Webpage(s) | http://ir.ciomp.ac.cn/bitstream/181722/25062/1/Yuan-2004-Study%20on%20the%20instabi.pdf |
| Alternate Webpage(s) | https://doi.org/10.1016/j.tsf.2003.11.295 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
