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Geometrical Effects on Valley-Orbital Filling Patterns in Silicon Quantum Dots for Robust Qubit Implementation
| Content Provider | Semantic Scholar |
|---|---|
| Author | Michielis, Marco De Prati, Enrico Fanciulli, Marco Fiori, Gianluca Iannaccone, Giuseppe |
| Copyright Year | 2012 |
| Abstract | The effect of the geometrical confinement on the shell filling in quantum dots obtained in silicon-on-insulator (SOI) tri-sided gate metal oxide semiconductor single-electron transistors (MOSSETs) is investigated on the basis of the current spin density functional theory. Variations of the geometric shape in nanowire SOI-MOSSETs with square section entail important changes in the valley filling sequences, whereas the variability of the gate length does not imply a significant modification of the filling patterns. Our results provide quantitative insights towards the shell engineering of silicon quantum dots for qubits with stable valley filling patterns. # 2012 The Japan Society of Applied Physics |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://www.gianlucafiori.org/articles/apex.pdf |
| Language | English |
| Access Restriction | Open |
| Subject Keyword | Density functional theory Electron Functional theories of grammar Heart rate variability Molecular orbital Nanowires One-electron universe Quantum Dots Quantum dot Qubit Semiconductor Silicon on insulator Topological insulator Transistor Triangular function Trimipramine metal oxide |
| Content Type | Text |
| Resource Type | Article |
