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Structural, Optical and Electrical Properties of Aluminium Doped Zinc Oxide Thin Film by Rf Magnetron Sputtering Method
| Content Provider | Semantic Scholar |
|---|---|
| Author | Arumugam, Sivashanmugam Gopinath, D. Lakshiminarayanan, G. |
| Copyright Year | 2017 |
| Abstract | Thin film of Al doped ZnO has been fabricated by depositing n-ZnO (5 mol% Al2O3 doped ZnO) layer on glass substrate. The XRD analysis confirms that all the three films have (002) preferential orientation with hexagonal wurtzite structure. From Hall measurement, all the films shown ntype conductivity with increased Career concentration which confirms the direct proportionality of career concentration with sputter time. The resistivity is found to be decreased with increase in sputter time due to fewer mismatches from the reflectance spectrum, the reflectance value is found to be as less as possible 35%. So that the films can be used as antireflection coating in solar cells. The Band gap energy of the films is found from Tauc’s plot and it is found that (2.49eV) band gap value increases due to Burstein-moss |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://www.ijarr.in/Admin/pdf/230.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
