NDLI: Vertical-cavity Surface-emitting Laser Technology

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Vertical-cavity Surface-emitting Laser Technology

Content Provider	Semantic Scholar
Abstract	Vertical-Cavity Surface-Emitting Lasers (VCSELs) are a relatively recent type of semiconductor lasers. VCSELs were first invented in the mid-1980's. Very soon, VCSELs gained a reputation as a superior technology for short reach applications such as fiber-channel, Ethernet and intra-systems links. Then, within the first two years of commercial availability (1996), VCSELs became the technology of choice for local area networks, effectively displacing edge-emitter lasers. This success was mainly due to the VCSEL's lower manufacturing costs and higher reliability compared to edge-emitters. Semiconductor lasers consist of layers of semiconductor material grown on top of each other on a substrate (the " epi "). For VCSELs and edge-emitters, this growth is typically done in a molecular-beam-epitaxy (MBE) or metal-organic-chemical-vapor-deposition (MOCVD) growth reactor. The grown wafer is then processed accordingly to produce individual devices. Figure 1 summarizes the differences between VCSEL and edge-emitter processing. Figure 1 Comparison of the growth/processing flow of VCSEL and edge-emitter semiconductor lasers.
File Format	PDF HTM / HTML
Alternate Webpage(s)	http://www.princetonoptronics.com/pdfs/Introduction2VCSELs.pdf
Language	English
Access Restriction	Open
Subject Keyword	Chemical vapor deposition Dental caries Emitter Device Component Fibre Channel Financial cost Gain Hepatitis B Surface Antigens Lambert's cosine law Lasers Lasers, Semiconductor Local Area Networks Metalorganic vapour phase epitaxy Molecular beam epitaxy Reactor (software) Reactor Device Component Substrate (electronics) Tissue fiber anatomical layer
Content Type	Text
Resource Type	Article

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