Loading...
Please wait, while we are loading the content...
Similar Documents
Hydroxyl functionalization improves the surface passivation of nanostructured silicon solar cells degraded by epitaxial regrowth
| Content Provider | Semantic Scholar |
|---|---|
| Author | Song, Jae-Won Nam, Yoon-Ho Park, Min-Joon Shin, Sunmi Wehrspohn, Ralf B. Lee, Jung-Ho |
| Copyright Year | 2015 |
| Abstract | Metal-assisted chemical etching is useful and cost-efficient for nanostructuring the surface of crystalline silicon solar cells. We have found that the nanoscale epitaxy of silicon occurs, upon subsequent annealing, at the Al2O3/Si interface amorphized by metal-assisted etching. Since this epitaxial growth penetrates into the pre-formed Al2O3 film, the bonding nature at the newly formed interfaces (by the regrown epitaxy) is deteriorated, resulting in a poor performance of Al2O3 passivation. Compared to the conventional hydrogen (H–) passivation, hydroxyl functionalization by oxygen plasma treatment was more effective as the wafer became thinner. For ultrathin (∼50 μm) wafers, ∼30% depression in surface recombination velocity led to the improvement of ∼15.6% in the short circuit current. The effectiveness of hydroxyl passivation validated by ultrathin wafers would be beneficial for further reducing the wafer cost of nanostructured silicon solar cells. |
| Starting Page | 39177 |
| Ending Page | 39181 |
| Page Count | 5 |
| File Format | PDF HTM / HTML |
| DOI | 10.1039/C5RA03775A |
| Volume Number | 5 |
| Alternate Webpage(s) | https://pubs.rsc.org/en/content/getauthorversionpdf/C5RA03775A |
| Alternate Webpage(s) | http://www.rsc.org/suppdata/c5/ra/c5ra03775a/c5ra03775a1.pdf |
| Alternate Webpage(s) | https://doi.org/10.1039/C5RA03775A |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
