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DEPOSITION OF HYDROGENATED NANOCRYSTALLINE SILICON (nc-Si:H) FILMS BY PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION
| Content Provider | Semantic Scholar |
|---|---|
| Author | Han, Shi Chee Tong, Goh Boon Muhamad, Muhamad Rasat Rahman, Saadah Abdul |
| Copyright Year | 2007 |
| Abstract | In this work, hydrogenated nanocrystalline silicon (nc-Si:H) thin films were deposited by radio-frequency Plasma Enhanced Chemical Vapour Deposition (rf-PECVD) technique on crystal silicon (c-Si) substrate at different rf power with a constant silane to hydrogen partial pressure ratio. The effects of rf power on the structural properties of nc-Si:H films deposited on c-Si substrate were studied using Fourier transform infrared spectroscopy (FTIR), x-ray diffraction (XRD), micro-Raman spectroscopy and scanning electron microscopy (SEM). The rf power showed influence on the structural properties of nc-Si:H films. The presence of nanocrystallites clusters in the film structures was observed strongly at low rf power. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://journal.masshp.net/wp-content/uploads/Journal/2007/Jilid%202/Shi%20Chee%20Han%2092-97.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |