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Low Phase Noise and Wide Tuning Range VCO Using the MOS Differential Amplifier with Active Load
| Content Provider | Semantic Scholar |
|---|---|
| Author | Tsai, Cher-Shiung Gan, Kwang-Jow Lin, Ming-Shin |
| Copyright Year | 2013 |
| Abstract | We demonstrate the design of a novel voltage-controlled oscillator (VCO), which is based on a metal-oxide-semiconductor field-effect transistor (MOS) differential amplifier with active load. This VCO achieves low phase noise and wide tuning range. The phase noise is –120 dBc/Hz at 600 KHz offset from a 1.216 GHz carrier frequency. This value is comparable to that of a LC-based integrated oscillator. The operating frequency can be tuned from 117 MHz to 1.216 GHz with the supply voltage varying from 1.3 V to 3.3 V. Therefore, the tuning range is about 90.38% which is larger than most of the LC and ring oscillator. The VCO circuit, which is constructed using a standard 0.35 μm CMOS technology, occupies only 26.25 × 7.52 μm die area and dissipated 10.56 mW under a 3.3 V supply voltage. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://file.scirp.org/pdf/CS20120400010_29447393.pdf |
| Language | English |
| Access Restriction | Open |
| Subject Keyword | CMOS Carrier frequency Clock rate Differential amplifier Hertz (Hz) Large Megahertz Oscillator Device Component Phase noise Ring oscillator Semiconductor Transistor Voltage-controlled oscillator voltage |
| Content Type | Text |
| Resource Type | Article |
