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Analysis of Photoluminescence for N-doped and undoped p-type ZnO Thin Films Fabricated by RF Magnetron Sputtering Method
| Content Provider | Semantic Scholar |
|---|---|
| Author | Liu, Yan-Yan Park, Choon-Bae Hoang, Geun Chang |
| Copyright Year | 2009 |
| Abstract | N-doped ZnO thin films were deposited on n-type Si(100) and homo-buffer layer, and undoped ZnO thin film was also deposited on homo-buffer layer by RF magnetron sputtering method. After deposition, all films were in-situ annealed at for 5 minutes in ambient of with pressure of 10Torr. X -ray diffraction shows that the homo-buffer layer is beneficial to the crystalline of N-doped ZnO thin films and all films have preferable c-axis orientation. Atomic force microscopy shows that undoped ZnO thin film grown on homo-buffer layer has an evident improvement of smoothness compared with N-dope ZnO thin films. Hall-effect measurements show that all ZnO films annealed at possess p-type conductivities. The undoped ZnO film has the highest carrier concentration of . The photoluminescence spectra show the emissions related to FE, DAP and many defects such as , , and . The p-type defects (, , and ) are dominant. The undoped ZnO thin film has a better p-type conductivity compared with N-doped ZnO thin film. |
| Starting Page | 24 |
| Ending Page | 27 |
| Page Count | 4 |
| File Format | PDF HTM / HTML |
| DOI | 10.4313/TEEM.2009.10.1.024 |
| Volume Number | 10 |
| Alternate Webpage(s) | http://www.transeem.org/Upload/files/TEEM/6-T09-003_24-27_.pdf |
| Alternate Webpage(s) | https://doi.org/10.4313/TEEM.2009.10.1.024 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
