Application of red light-emitting diodes using Mg 3 . 5 Ge 1 . 25 O 6 : Mn 4 þ phosphor

Content Provider	Semantic Scholar
Author	Lee, Seung Jae Jung, Jongjin Park, Ja young Jang, Hye Mi Kimb, Y. M. Park, Joung Kyu
Copyright Year	2013
Abstract	Mg3.5Ge1.25O6:Mn was synthesized by a solid-state reaction and its photoluminescence characteristics were investigated. The synthesized phosphor showed a narrow emission band between 600 and 700 nm with two clear peaks at 632 and 660 nm and two obscure peaks at 626 and 653 nm due to the E-A2 transition of Mn4þ (λex1⁄4405 nm). Red light-emitting diodes (LEDs) were fabricated through the integration of an InGaN UV chip (λem1⁄4405 nm) and Mg3.5Ge1.25O6:Mn phosphor in a single package. Red LEDs showed CIE chromaticity with values of x1⁄40.32 and y1⁄40.10 and the color temperature of
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Alternate Webpage(s)	http://chem.yonsei.ac.kr/~yrkim/pdf/104.pdf
Language	English
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Content Type	Text
Resource Type	Article